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Longsys Showcases End-to-End AI Storage Solutions at FMS 2026

The memory semiconductor firm brought its "Edge AI Storage Fusion" theme to the Future of Memory and Storage 2026 exhibition in San Jose, California.

Longsys Showcases End-to-End AI Storage Solutions at FMS 2026
Photo: Anne Jacko from Portland, Oregon, USA · CC BY-SA 2.0

SAN JOSE, California — Longsys (301308.SZ) presented its "Edge AI Storage Fusion" showcase at the Future of Memory and Storage (FMS) 2026 in Silicon Valley on Aug 6, 2026, spanning three core scenarios: AI Agent Hosts (AI BOX), AI PCs and AI Mobile embedded devices.

Co-optimised with AMD

To address memory bottlenecks, KV cache expansion and latency challenges in local large language model (LLM) deployment, Longsys partnered with AMD to integrate AIDIMM™ high-bandwidth memory, the iSA™ (Intelligent Storage Agent) and AISSD™.

A live demo jointly developed with SixUnion showed a system running 70B-, 80B- and 122B-parameter models smoothly using just 64GB of AIDIMM™ memory, with significantly lower memory usage and higher inference efficiency.

Longsys also unveiled an AMD Ryzen™ AI Halo platform integrated with AISSD™ and iSA™, now AMD AVL-certified and ready for mass deployment.

AIDIMM™ delivers a native 256-bit interface, up to 307.2 GB/s peak bandwidth and up to 128GB capacity per module, with a plug-and-play design suited for scaled manufacturing. The proprietary iSA™ scheduling engine uses MoE offloading, tiered cache management and predictive prefetching to balance memory and storage resources in real time.

AI PCs and mobile

Longsys' 5nm SPU™ (Storage Processing Unit) powers a DRAM-less PCIe Gen5 SSD achieving 14.8 GB/s sequential read and 13 GB/s write speeds at ≤6.3W — roughly 10% lower than comparable controllers. Built-in lossless compression of up to 2:1 expands usable capacity without affecting speed, while its PCIe Gen5 mSSD reaches 11 GB/s read, 10 GB/s write and 2200K/1800K IOPS.

With flexible form factors and monthly manufacturing capacity exceeding one million units, Longsys supplies partners including Lenovo and ASUS.

Its HLCache™ UFS technology offloads cold data from DRAM to storage. Tested on a Google Pixel 7a, a 4GB LPDDR5 device saw background app capacity rise 64% (17 to 28 apps) and DRAM usage drop 20% (3.1GB to 2.5GB), approaching a native 6GB configuration while supporting 13B–20B parameter models. AILPBGA™ complements this with a 256-bit, 307GB/s embedded memory solution in a 22×22mm package.

Founded in 1999, Longsys runs a multi-brand strategy including consumer brand Lexar and South America manufacturing and operations centre Zilia. Product performance data is based on internal testing and actual results may vary.

This article was produced with the assistance of artificial intelligence (AI), in accordance with our editorial policy.

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Longsys Showcases End-to-End AI Storage Solutions at FMS 2026 | Harian Malaysia